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Document Details
Document Type
:
Article In Journal
Document Title
:
Thermally activated conductivity of Si hybrid structure based on ZnPc thin film
Thermally activated conductivity of Si hybrid structure based on ZnPc thin film
Subject
:
physics
Document Language
:
English
Abstract
:
In this study, an analysis of temperature-dependent electrical characteristics of ZnPc/p-Si structure has been presented. Conduction mechanisms that are accounted for the organic/inorganic devices are evaluated. At low forward voltage, current-voltage (I-V) characteristics show ohmic behavior, limiting extraction of holes from p-Si over the ZnPc/p-Si heterojunction. Thermally activated conduction mechanism appears to be space-charge-limited conduction mechanism, taking into account the presence of an exponential trap distribution with total concentration of traps, N-t of 5.77 x 10(25) m(-3). The series resistance is found to be temperature dependent. There is a critical point on the regime of series resistance at 200 K. The capacitance varies with temperature at different rates below and above room temperature, indicating a variation in the dielectric constant.
ISSN
:
0947-8396
Journal Name
:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume
:
122
Issue Number
:
10
Publishing Year
:
1437 AH
2016 AD
Article Type
:
Article
Added Date
:
Tuesday, August 8, 2017
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
M Soylu
Soylu, m
Investigator
Doctorate
soylum74@yahoo.com
A.A Al-Ghamdi,
Al-Ghamdi, A.A
Researcher
Doctorate
F Yakuphanoglu
Yakuphanoglu, F
Researcher
Doctorate
Files
File Name
Type
Description
42522.pdf
pdf
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