Document Details

Document Type : Article In Journal 
Document Title :
Fabrication and Electrical Characterization of Organic-On- Inorganic Photodiodes
Fabrication and Electrical Characterization of Organic-On- Inorganic Photodiodes
 
Subject : physics 
Document Language : English 
Abstract : The electrical characteristics of the fabricated Au/organic layer/p-Si/AI diode have been investigated using current voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/omega) measurements. I-V measurements of the photodiode were carried out various illumination conditions. The values of ideality factor (n) and barrier height (Phi(B0)) for all illumination conditions are found to be about 4.2 and 0.72 eV, respectively. Also, the photocurrent results in the reverse bias of the diode indicate that photocurrent under illumination is higher than the dark current. In addition, negative capacitance (NC) behavior observed in the C-V plots can be explained by taking into account the loss of interface charges at occupied states below Fermi level. 
ISSN : 1555-130X 
Journal Name : JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 
Volume : 9 
Issue Number : 5 
Publishing Year : 1435 AH
2014 AD 
Article Type : Article 
Added Date : Sunday, July 30, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
R. H Al-OrainyAl-Orainy, R. H InvestigatorDoctorate 
A.A HendiHendi, A.A ResearcherDoctorate 

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