Main Page
About Science
Faculty Deanship
Letter of Dean
Overview of Deanship
Vice Deans
Vice Dean
Letter of Vice-dean
Overview of Vice-deanship
Vice Dean for Graduate Studies
Letter of Vice Dean for Graduate Studies
Overview of Vice Dean of Postgraduate Studies
Research and Innovation Unit
Vice Dean for Girls Campus
Faculty Management
Letter of Managing Director-Boys Campus
Letter of Managing Director-Girls Campus
Overview of Management
Educational Affairs
Males Campus
Staff
Females Campus
Contact Us
Research
عربي
English
About
Admission
Academic
Research and Innovations
University Life
E-Services
Search
Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Effects of annealing temperatures on optical and electrical properties of vacuum evaporated Ga15Se77In8 chalcogenide thin films
Effects of annealing temperatures on optical and electrical properties of vacuum evaporated Ga15Se77In8 chalcogenide thin films
Subject
:
Physics
Document Language
:
English
Abstract
:
The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary parts of dielectric constants) of amorphous and thermally annealed thin films of Ga 15Se77In8 chalcogenide glasses with thickness 4000 have been investigated from absorption and reflection spectra as a function of photon energy in the wave length region 400-800 nm. Thin films of Ga 15Se77In8 chalcogenide glasses were thermally annealed for 2 h at three different annealing temperatures 333 K, 348 K and 363 K, which are in between the glass transition and crystallization temperature of Ga15Se77In8 glasses. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It was found that the optical band gap decreases with increasing annealing temperature. It has been observed that the value of absorption coefficient and extinction coefficient increases while the values of refractive index decrease with increasing annealing temperature. The decrease in optical band gap is explained on the basis of the change in nature of films, from amorphous to crystalline state. The dc conductivity of amorphous and thermally annealed thin films of Ga15Se77In8 chalcogenide glasses is also reported for the temperature range 298-393 K. It has been observed that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges. The dc conductivity was observed to increase with the corresponding decrease in activation energy on increasing annealing temperature in the present system. These results were analyzed in terms of the Davis-Mott model.
ISSN
:
0042-207X
Journal Name
:
Vacuum
Volume
:
85
Issue Number
:
9
Publishing Year
:
1432 AH
2011 AD
Article Type
:
Article
Added Date
:
Tuesday, June 12, 2012
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
فيصل عبدالعزيز العقل
Al-Agel, Faisal A
Researcher
Doctorate
fagel@kau.edu.sa
Files
File Name
Type
Description
33587.pdf
pdf
Abstract
Back To Researches Page